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Tuesday, July 28, 2020 | History

3 edition of Silicon superlattices II found in the catalog.

Silicon superlattices II

J. A Moriarty

Silicon superlattices II

Si-Ge heterostructures and MOS systems

by J. A Moriarty

  • 346 Want to read
  • 31 Currently reading

Published by NASA-Langley Research Center in Hampton, VA .
Written in English

    Subjects:
  • Silicon,
  • Semiconductors

  • Edition Notes

    Statementprincipal investigator, J.A. Moriarty
    SeriesNASA-CR -- 174287, NASA contractor report -- 174287
    ContributionsLangley Research Center, University of Cincinnati. Dept. of Electrical and Computer Engineering
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL14929224M

    Get this from a library! Towards the first silicon laser. [Lorenzo Pavesi; S V Gaponenko; Luca Dal Negro;] -- Silicon is the leading material in microelectronics, but the the silicon laser remains undemonstrated, largely because of a fundamental limitation related to . an insulating layer of silicon dioxide, followed by a metal layer; this structure is the gate (labeled G in the flgure) and is used to apply an electric fleld through the oxide to the silicon. For the MOS device shown in the flgure the base region is p-type and the source (S) and drain (D) regions are n-type.

    Semiconductor superlattices Information on IEEE's Technology Navigator. Start your Research Here! Semiconductor superlattices-related Conferences, Publications, and Organizations. The present invention relates to new crystalline zeolite SSZ which comprises oxides of (1) silicon or a mixture of silicon and germanium, and (2) zinc, said zinc being present in an amount from.

    David J. Lockwood is the author of Silicon Photonics II ( avg rating, 1 rating, 0 reviews, published ), Light Scattering in Semiconductor Structu /5(5). A realistic tight‐binding band‐structure model of silicon superlattices is formulated and used to study systems of potential applied interest, including periodic layered Si‐Si 1−x Ge x heterostructures. The results suggest a possible new mechanism for achieving enhanced transverse carrier mobility in such structures: reduced transverse conductivity effective masses associated with the.


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Silicon superlattices II by J. A Moriarty Download PDF EPUB FB2

This chapter focuses on characterization, modeling, and simulation about the type-II superlattices photodetector application. Despite dramatic improvements in type-II superlattices in the past 15 years, challenges still exist in InAs/GaSb and InAs/GaInSb superlattices: The diffusion current, Shockley-Read-Hall (SRH) recombination current, tunneling current, and surface leakage current at Author: Sanghyun Lee, Kent J.

Price. The concept of tilted superlattices has been extended to other material systems, such as Silicon superlattices II book (Chalmers et al., ), and II–VI semiconductors (Hartmann et al., ; Hartmann et al., ; Marsal et al., ). A major drawback for the application of tilted superlattices, however, is the precise control required for the growth rates.

Porous silicon superlattices (PSSs) are a novel type of siliconbased heterostructures, in which the porosity varies periodically with depth.

The two different types of PSSs and their techniques of formation are described, as are their optical properties and an example of an application: a Fabry‐Perot‐type interference by: This book is volume II of a series of books on silicon photonics.

It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective.

It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored. Structural and Optical Properties of Porous Silicon Nanostructures 1st Edition.

G Amato, C. Delerue, H J VonBardeleben Febru This volume provides a comprehensive review of the experimental and theoretical aspects of the optical and transport properties of nanoporous silicon, their relation to the microscopic structure of nanocrystals, and the application of porous silicon in.

Publisher Summary. The optical absorption of a superlattice, where the minibands are fairly distinct may be modeled. To measure the optical absorption without removing the back substrate, a technique is used that takes the reflectivity at an angle in addition to the usual normal incidence, resulting in the determination of both refractive index and absorption coefficient.

2 Molecular Beam Epitaxy of Superlattices in Thin Films I. Introduction II. Molecular Beam Epitaxy III. Structure of Semiconductor Superlattices IV. Properties of Superlattice Structures V. Concluding Remarks References 3 Epitaxial Growth of Silicon Structures—Thermal, Laser- and Electron-Beam-Induced I.

Introduction II. Purchase Silicon Molecular Beam Epitaxy, Volume 10A - 1st Edition. Print Book & E-Book. ISBNDeep levels in silicon–oxygen superlattices E Simoen1,2, S Jayachandran1,3, A Delabie1,4, M Caymax1,3 and M Heyns1,3 1Imec, Kapeldr B Leuven, Belgium 2Department of Solid State Sciences, Ghent University, Krijgslaan S1, B Gent, Belgium 3KU Leuven, Department of Metallurgy and Materials, Castle Arenb B Leuven, Belgium 4KU Leuven, Department of.

In this paper, we propose a novel approach to on-chip cooling by thermionic emission by using vertical superlattices fabricated directly into the silicon wafer as opposed to conventional planar additive deposition methods used by most other groups.

The advantages of this method are (i) significantly lower fabrication costs and (ii) adequate number of superlattice layers translating to higher. Get this from a library. Silicon superlattices II: Si-Ge heterostructures and MOS systems.

[J A Moriarty; Langley Research Center.; University of Cincinnati. Department of Electrical and Computer Engineering.].

In this study, p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer.

Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si.

The properties of type-II InAs/GaSb superlattices should be strongly dependent on the interface type. Interfaces have been proposed as a design tool for short period InAs/GaSb superlattices for mid-infrared detectors.[12] Only InSb and GaAs types of interfaces have. Silicon Carbide: Materials, Processing & Devices (Optoelectronic Properties of Semiconductors and Superlattices) [Zhe, Chuan Feng] on *FREE* shipping on qualifying offers.

Silicon Carbide: Materials, Processing & Devices (Optoelectronic Properties of Semiconductors and Superlattices). Abstract: In this study, p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates.

The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si.

Growth and properties of Si/Ge and Si/SixGe1-x strained layer superlattices are reviewed. The critical thickness of single layers and asymmetrically strained superlattices are determined by LEED and Raman spectroscopy. The importance of strain symmetrization is discussed.

Built-in strains are determined by phonon Raman scattering. Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics.

The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. Discovery. Superlattices were discovered early in by Johansson and Linde after the studies on gold-copper and palladium-copper systems through their special X-ray diffraction r experimental observations and theoretical modifications on the field were done by Bradley and Jay, Gorsky, Borelius, Dehlinger and Graf, Bragg and Williams and Bethe.

Calculations show that assembly of hard spheres into binary superlattices isostructural with NaCl, the LaF 3 nanoplates lie flat on silicon oxide surface Farad. Trans. II 74, – Fig. 4 Figure 4 shows the periodic potential with periodd=a+ has the form V(x)= 0−b.

Electronic structure and impurity-limited electron mobility of silicon superlattices Article (PDF Available) in Physical Review B 32(2) July with 18 Reads How we measure 'reads'.Let us first consider the preferred fiber-optic wavelengths of and μm.

There are no binary semiconductors with bandgaps at these wavelengths, and so we have to use alloys to tune the bandgap by varying the composition (Chap. 30).A typical example is the ternary alloy Ga x In 1−x As, which is lattice matched to InP when x = 47%, giving a bandgap of eV ( μm).Silicon Photonics II: Components and Integration (Topics in Applied Physics ()) David J.

Lockwood. This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits.

superlattices, and.